Fundamental resolution limits during electron induced direct write synthesis.

ACS applied materials & interfaces

PubMedID: 24761930

Arnold G, Timilsina R, Fowlkes J, Orthacker A, Kothleitner G, Rack PD, Plank H. Fundamental resolution limits during electron induced direct write synthesis. ACS Appl Mater Interfaces. 2014;.
In this study we focus on the resolution limits for quasi 2-D single lines synthesized via focused electron beam induced direct write deposition at 5 keV and 30 keV in a scanning electron microscope. To understand the relevant proximal broadening effects the substrates were thicker than the beam penetration depth and we used the MeCpPt(IV)Me3 precursor under standard gas injection system conditions. It is shown by experiment and simulation how backscatter electron yields increase during the initial growth stages which broaden the single lines consistent with the backscatter range of the deposited material. By this it is shown that the beam diameter together with the evolving backscatter radius of the deposit material determines the achievable line widths even for ultrathin deposit heights in the sub-5 nm regime.