Materials design parameters for infrared device applications based on III-V semiconductors.

Applied optics

PubMedID: 28157865

Svensson SP, Sarney WL, Donetsky D, Kipshidze G, Lin Y, Shterengas L, Xu Y, Belenky G. Materials design parameters for infrared device applications based on III-V semiconductors. Appl Opt. 2017;56(3):B58-B63.
The collaborative development of infrared detector materials by the Army Research Laboratory and Stony Brook University has led to new fundamental understandings of materials, as well as new levels of control and flexibility in III-V semiconductor crystal growth by molecular beam epitaxy. Early work on mid-wave strained layer superlattice (SLS) cameras led to a subsequent focus on minority carrier lifetime studies, which resulted in the proposal of the Ga-free SLS on GaSb substrates. The later demonstration of virtual substrate technology allowed the lattice constant to become a design parameter and enabled growth of undistorted bulk InAsSb. When grown in that manner, InAsSb has a bandgap bowing parameter large enough to cover absorption wavelengths across the entire long-wavelength band (8-12 µm). Even longer wavelengths are achieved with a general Ga-free SLS approach, with a virtual substrate having a lattice constant significantly larger than that of GaSb and with InAsSb in both bi-layers in the period. Since these layers can also be made very thin, the general Ga-free SLS does not suffer from the relatively low optical absorption and poor hole transport, which is characteristic of the special Ga-free SLS on GaSb for long-wavelength designs. Finally, the general Ga-free InAsSb SLS provides a method to induce and control sustained atomic ordering, which is yet another new design parameter.