Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

Scientific reports

PubMedID: 28400555

Li X, Jordan MB, Ayari T, Sundaram S, El Gmili Y, Alam S, Alam M, Patriarche G, Voss PL, Paul Salvestrini J, Ougazzaden A. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. Sci Rep. 2017;7(1):786.
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2. 5?µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215?nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2?nA under 100?V, and 100?±?20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.