Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation.

Physical review letters

PubMedID: 17930919

Wenisch J, Gould C, Ebel L, Storz J, Pappert K, Schmidt MJ, Kumpf C, Schmidt G, Brunner K, Molenkamp LW. Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation. Phys Rev Lett. 2007;99(7):077201.
We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.